Part Number Overview

Manufacturer Part Number
IPB042N10N3GE8187ATMA1
Description
MOSFET N-CH 100V 100A D2PAK
Detailed Description
N-Channel 100 V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
117 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8410 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB042

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IPB042N10N3GE8187ATMA1DKR
IPB042N10N3 G E8187TR-ND
IPB042N10N3GE8187
IPB042N10N3 G E8187
IPB042N10N3 G E8187DKR
SP000939332
IPB042N10N3 G E8187CT
IPB042N10N3GE8187ATMA1TR
IPB042N10N3 G E8187DKR-ND
IPB042N10N3 G E8187-ND
IPB042N10N3 G E8187CT-ND
IPB042N10N3GE8187ATMA1CT

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB042N10N3GE8187ATMA1

Documents & Media

Datasheets
1(IPx0(42,45)N10N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx0(42,45)N10N3 G)

Quantity Price

-

Substitutes

Part No. : IPB042N10N3GATMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 38,835
Unit Price. : $2.86000
Substitute Type. : Parametric Equivalent