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Part Number Overview
Manufacturer Part Number
2SB1151-S1-AZ
Description
POWER BIPOLAR TRANSISTOR, PNP
Detailed Description
Bipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Through Hole TO-126
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
332
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
5 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 200mA, 2A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A, 1V
Power - Max
1.3 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-2SB1151-S1-AZ
RENRNS2SB1151-S1-AZ
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SB1151-S1-AZ
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 332
Unit Price: $0.91
Packaging: Bulk
MinMultiplier: 332
Packaging: Bulk
MinMultiplier: 332
Substitutes
-