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GermanyDF80R12W2H3B11BOMA1
Part Number Overview
Manufacturer Part Number
DF80R12W2H3B11BOMA1
Description
IGBT MODULE
Detailed Description
IGBT Module Dual Boost Chopper 1200 V 50 A 190 W Chassis Mount
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
8
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
IGBT Type
-
Configuration
Dual Boost Chopper
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
50 A
Power - Max
190 W
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 20A
Current - Collector Cutoff (Max)
1 mA
Input Capacitance (Cies) @ Vce
2.35 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFDF80R12W2H3B11BOMA1
2156-DF80R12W2H3B11BOMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies DF80R12W2H3B11BOMA1
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 8
Unit Price: $37.81
Packaging: Bulk
MinMultiplier: 8
Packaging: Bulk
MinMultiplier: 8
Substitutes
-