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Part Number Overview
Manufacturer Part Number
STB18NM60N
Description
MOSFET N-CH 600V 13A D2PAK
Detailed Description
N-Channel 600 V 13A (Tc) 110W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
MDmesh™ II
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STB18N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
497-10297-6
-497-10297-6
497-10297-1
497-10297-2
-497-10297-2
-497-10297-1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB18NM60N
Documents & Media
Datasheets
1(STx18NM60N)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Obsolescence/ EOL
1(Power MOSFET Transistors 29/Jul/2013)
HTML Datasheet
1(STx18NM60N)
Quantity Price
-
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