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Part Number Overview
Manufacturer Part Number
IRF634S
Description
MOSFET N-CH 250V 8.1A D2PAK
Detailed Description
N-Channel 250 V 8.1A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
IRF634S Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
770 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRF634
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRF634S
Documents & Media
EDA Models
1(IRF634S Models)
Quantity Price
-
Substitutes
-