China
Spain
Rusia
Italy
GermanyFQD4P25TM-WS
Part Number Overview
Manufacturer Part Number
FQD4P25TM-WS
Description
MOSFET P-CH 250V 3.1A DPAK
Detailed Description
P-Channel 250 V 3.1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.1Ohm @ 1.55A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
FQD4P25
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FQD4P25TM_WS-ND
FQD4P25TM_WSDKR-ND
FQD4P25TM-WSDKR
FQD4P25TM-WSTR
FQD4P25TM_WS
FQD4P25TM-WSCT
FQD4P25TM_WSDKR
FQD4P25TM_WSTR
FQD4P25TM_WSCT-ND
FQD4P25TM_WSCT
FQD4P25TM_WSTR-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQD4P25TM-WS
Documents & Media
Datasheets
1(FQD4P25TM_WS)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
()
PCN Packaging
()
PCN Part Number
1(Mult Device Part Number Chg 30/May/2017)
Quantity Price
-
Substitutes
-