Part Number Overview

Manufacturer Part Number
NVD5862NT4G
Description
MOSFET N-CH 60V 18A/98A DPAK
Detailed Description
N-Channel 60 V 18A (Ta), 98A (Tc) 4.1W (Ta), 115W (Tc) Surface Mount DPAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
NVD5862NT4G Models
Standard Package
2,500
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.7mOhm @ 48A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
82 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
4.1W (Ta), 115W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
NVD586

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

ONSONSNVD5862NT4G
NVD5862NT4G-VF01-ND
NVD5862NT4G-VF01
2156-NVD5862NT4G

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NVD5862NT4G

Documents & Media

Datasheets
1(NVD5862N)
Environmental Information
()
PCN Obsolescence/ EOL
()
PCN Design/Specification
()
PCN Assembly/Origin
1(Wafer Fab Capacity 27/Jul/2020)
HTML Datasheet
1(NVD5862N)
EDA Models
1(NVD5862NT4G Models)

Quantity Price

-

Substitutes

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