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Part Number Overview
Manufacturer Part Number
SUM25P10-138-E3
Description
MOSFET N-CH 100V 16.7A TO263
Detailed Description
N-Channel 100 V 16.7A (Tc) 3.75W (Ta), 88.2W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
16.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
13.8mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2110 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 88.2W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SUM25
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SUM25P10-138-E3
Documents & Media
Datasheets
1(SUM25P10-138-E3)
PCN Obsolescence/ EOL
1(Commercial Mosfet OBS 29/Apr/2016)
PCN Assembly/Origin
1(Assembly Site Add 9/Jun/2016)
HTML Datasheet
1(SUM25P10-138-E3)
Quantity Price
-
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