China
Spain
Rusia
Italy
GermanySPU08P06P
Part Number Overview
Manufacturer Part Number
SPU08P06P
Description
MOSFET P-CH 60V 8.83A TO251-3
Detailed Description
P-Channel 60 V 8.83A (Ta) 42W (Tc) Through Hole PG-TO251-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
8.83A (Ta)
Rds On (Max) @ Id, Vgs
300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
SPU08P
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPU08P06PX
SPU08P06PXTIN
SP000012086
SPU08P06PXTIN-ND
SPU08P06PIN
SPU08P06PIN-NDR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPU08P06P
Documents & Media
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
Quantity Price
-
Substitutes
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