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Part Number Overview
Manufacturer Part Number
IRFL210
Description
MOSFET N-CH 200V 960MA SOT223
Detailed Description
N-Channel 200 V 960mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
IRFL210 Models
Standard Package
80
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
960mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 580mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 3.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223
Package / Case
TO-261-4, TO-261AA
Base Product Number
IRFL210
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFL210
Documents & Media
Datasheets
1(IRFL210, SiHFL210)
HTML Datasheet
1(IRFL210, SiHFL210)
EDA Models
1(IRFL210 Models)
Product Drawings
()
Quantity Price
-
Substitutes
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