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Part Number Overview
Manufacturer Part Number
IPB65R660CFDATMA1
Description
MOSFET N-CH 650V 6A D2PAK
Detailed Description
N-Channel 650 V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO263-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
615 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB65R
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000861698
IPB65R660CFDDKR-ND
IPB65R660CFDATMA1TR
INFINFIPB65R660CFDATMA1
IPB65R660CFDATMA1CT
IPB65R660CFDDKR
IPB65R660CFD-ND
IPB65R660CFDATMA1-ND
IPB65R660CFDCT-ND
IPB65R660CFDTR-ND
2156-IPB65R660CFDATMA1-ITTR
IPB65R660CFD
IPB65R660CFDATMA1DKR
IPB65R660CFDCT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB65R660CFDATMA1
Documents & Media
Datasheets
1(IPx65R660CFD)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx65R660CFD)
Simulation Models
1(CoolMOS™ Power MOSFET 650V CFD2 Spice Model)
Quantity Price
-
Substitutes
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Quantity Available. : 0
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