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Part Number Overview
Manufacturer Part Number
IPD60R1K0CEATMA1
Description
MOSFET N-CH 600V 4.3A TO252-3
Detailed Description
N-Channel 600 V 4.3A (Tc) 37W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IPD60R1K0CEATMA1 Models
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
37W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD60R
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD60R1K0CEATMA1TR
INFINFIPD60R1K0CEATMA1
IPD60R1K0CEATMA1CT
SP001276032
2156-IPD60R1K0CEATMA1-ITTR-ND
IPD60R1K0CEATMA1DKR
2156-IPD60R1K0CEATMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD60R1K0CEATMA1
Documents & Media
Datasheets
1(IPD60R1K0CE, IPU60R1K0CE)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IPD60R1K0CE, IPU60R1K0CE)
EDA Models
1(IPD60R1K0CEATMA1 Models)
Quantity Price
-
Substitutes
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