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Part Number Overview
Manufacturer Part Number
BUZ32HXKSA1
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 200 V 9.5A (Tc) 75W (Tc) Through Hole PG-TO220-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
507
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-BUZ32HXKSA1
INFINFBUZ32HXKSA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BUZ32HXKSA1
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 507
Unit Price: $0.59
Packaging: Bulk
MinMultiplier: 507
Packaging: Bulk
MinMultiplier: 507
Substitutes
-