Part Number Overview

Manufacturer Part Number
IPP50R350CPXKSA1
Description
MOSFET N-CH 550V 10A TO220-3
Detailed Description
N-Channel 550 V 10A (Tc) 89W (Tc) Through Hole PG-TO220-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
550 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
350mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1020 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
89W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
IPP50R

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

2156-IPP50R350CPXKSA1
ROCINFIPP50R350CPXKSA1
IPP50R350CPXK
IPP50R350CP
IPP50R350CPIN
SP000680940
IPP50R350CPIN-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP50R350CPXKSA1

Documents & Media

Datasheets
1(IPP50R350CP)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Power Factor Correction)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPP50R350CP)
Simulation Models
1(CoolMOS™ Power MOSFET 500V C3 Spice Model)

Quantity Price

-

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