Part Number Overview

Manufacturer Part Number
IPW65R019C7FKSA1
Description
MOSFET N-CH 650V 75A TO247-3
Detailed Description
N-Channel 650 V 75A (Tc) 446W (Tc) Through Hole PG-TO247-3
Manufacturer
Infineon Technologies
Standard LeadTime
20 Weeks
Edacad Model
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolMOS™ C7
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
19mOhm @ 58.3A, 10V
Vgs(th) (Max) @ Id
4V @ 2.92mA
Gate Charge (Qg) (Max) @ Vgs
215 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9900 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
446W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Base Product Number
IPW65R019

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

448-IPW65R019C7FKSA1
SP000928646
IPW65R019C7FKSA1-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPW65R019C7FKSA1

Documents & Media

Datasheets
1(IPW65R019C7)
Other Related Documents
1(Part Number Guide)
Environmental Information
1(RoHS Certificate)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPW65R019C7)
Simulation Models
1(CoolMOS™ Power MOSFET 650V C7 Spice Model)

Quantity Price

Quantity: 510
Unit Price: $14.29165
Packaging: Tube
MinMultiplier: 1
Quantity: 120
Unit Price: $16.748
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $17.86467
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $21.55
Packaging: Tube
MinMultiplier: 1

Substitutes

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