Part Number Overview

Manufacturer Part Number
SIHD6N62E-GE3
Description
MOSFET N-CH 620V 6A DPAK
Detailed Description
N-Channel 6A (Tc) 78W (Tc) Surface Mount TO-252AA
Manufacturer
Vishay Siliconix
Standard LeadTime
21 Weeks
Edacad Model
Standard Package
75
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
578 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
SIHD6

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SIHD6N62E-GE3TR
SIHD6N62E-GE3DKRINACTIVE
SIHD6N62E-GE3DKR
SIHD6N62E-GE3TRINACTIVE
SIHD6N62E-GE3DKR-ND
SIHD6N62E-GE3TR-ND
SIHD6N62E-GE3CT
SIHD6N62E-GE3CT-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHD6N62E-GE3

Documents & Media

Datasheets
1(SIHD6N62E-GE3)
PCN Assembly/Origin
1(SIL-079-2014-Rev-0 26/Sep/2014)
HTML Datasheet
1(SIHD6N62E-GE3)

Quantity Price

Quantity: 3000
Unit Price: $0.64879
Packaging: Tube
MinMultiplier: 3000

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