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Part Number Overview
Manufacturer Part Number
IXFN40N110Q3
Description
MOSFET N-CH 1100V 35A SOT-227B
Detailed Description
N-Channel 1100 V 35A (Tc) 960W (Tc) Chassis Mount SOT-227B
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
HiPerFET™, Q3 Class
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1100 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
260mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
14000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
960W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXFN40
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFN40N110Q3
Documents & Media
Datasheets
1(IXFN40N110Q3)
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(IXFN40N110Q3)
Quantity Price
-
Substitutes
-