Part Number Overview

Manufacturer Part Number
IPB034N06N3GATMA1
Description
MOSFET N-CH 60V 100A TO263-7
Detailed Description
N-Channel 60 V 100A (Tc) 167W (Tc) Surface Mount PG-TO263-7
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11000 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number
IPB034N

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IPB034N06N3 GDKR-ND
IPB034N06N3 GTR
IPB034N06N3 GDKR
SP000397990
IPB034N06N3 G
IPB034N06N3GATMA1TR
IPB034N06N3GATMA1DKR
IPB034N06N3 GCT
IPB034N06N3G
IPB034N06N3GATMA1CT
IPB034N06N3 GTR-ND
IPB034N06N3 GCT-ND
IPB034N06N3 G-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB034N06N3GATMA1

Documents & Media

Datasheets
1(IPB034N06N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPB034N06N3 G)

Quantity Price

-

Substitutes

Part No. : IPB017N06N3GATMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 0
Unit Price. : $3.53000
Substitute Type. : Direct
Part No. : IPB034N06N3GATMA2
Manufacturer. : Infineon Technologies
Quantity Available. : 0
Unit Price. : $0.71526
Substitute Type. : Parametric Equivalent