Part Number Overview

Manufacturer Part Number
2SC3361-6-TB-E-ON
Description
NPN EPITAXIAL PLANAR SILICON
Detailed Description
Bipolar (BJT) Transistor NPN 50 V 150 mA 100MHz 150 mW Surface Mount 3-CP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
1,567
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
150 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1mA, 6V
Power - Max
150 mW
Frequency - Transition
100MHz
Operating Temperature
125°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-CP

Environmental & Export Classifications

RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
HTSUS
0000.00.0000

Other Names

ONSONS2SC3361-6-TB-E
2156-2SC3361-6-TB-E-ON

Category

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC3361-6-TB-E-ON

Documents & Media

-

Quantity Price

Quantity: 1567
Unit Price: $0.19
Packaging: Bulk
MinMultiplier: 1567

Substitutes

-