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Part Number Overview
Manufacturer Part Number
FDD4N60NZ
Description
MOSFET N-CH 600V 3.4A DPAK
Detailed Description
N-Channel 600 V 3.4A (Tc) 114W (Tc) Surface Mount TO-252AA
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
UniFET-II™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
3.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10.8 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
-
Base Product Number
FDD4N60
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FDD4N60NZ-ND
FDD4N60NZCT
FDD4N60NZTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDD4N60NZ
Documents & Media
Datasheets
1(FDD4N60NZ)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
()
PCN Assembly/Origin
1(Mult Dev 13/Aug/2020)
PCN Packaging
()
Quantity Price
-
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