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Part Number Overview
Manufacturer Part Number
NTP8G202NG
Description
GANFET N-CH 600V 9A TO220-3
Detailed Description
N-Channel 600 V 9A (Tc) 65W (Tc) Through Hole TO-220
Manufacturer
onsemi
Standard LeadTime
Edacad Model
NTP8G202NG Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V
Rds On (Max) @ Id, Vgs
350mOhm @ 5.5A, 8V
Vgs(th) (Max) @ Id
2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 4.5 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
NTP8G2
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
NTP8G202NGOS
2156-NTP8G202NG-ON
ONSONSNTP8G202NG
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTP8G202NG
Documents & Media
Datasheets
1(NTP8G202N)
Video File
1(GaN Transistors (Gallium Nitride))
Environmental Information
()
Featured Product
1(Compact Power Solutions)
PCN Obsolescence/ EOL
()
HTML Datasheet
1(NTP8G202N)
EDA Models
1(NTP8G202NG Models)
Quantity Price
-
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