SI4172DY-T1-GE3

Part Number Overview

Manufacturer Part Number

SI4172DY-T1-GE3

Description

MOSFET N-CH 30V 15A 8SO

Detailed Description

N-Channel 30 V 15A (Tc) 2.5W (Ta), 4.5W (Tc) Surface Mount 8-SOIC

Manufacturer

Vishay Siliconix

Standard LeadTime

Edacad Model

Standard Package

2,500

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

Vishay Siliconix

Series

TrenchFET®

Package

Tape & Reel (TR)

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

820 pF @ 15 V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 4.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Base Product Number

SI4172

Environmental & Export Classifications

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

SI4172DY-T1-GE3TR

SI4172DY-T1-GE3DKR

SI4172DYT1GE3

SI4172DY-T1-GE3-ND

SI4172DY-T1-GE3CT

Documents & Media

Datasheets

1(SI4172DY)

PCN Obsolescence/ EOL

1(Mult Mosfet EOL 30/Aug/2018)

PCN Assembly/Origin

1(Mult Devs Assembly Location 31/Jan/2023)

HTML Datasheet

1(SI4172DY)

Quantity Price

-

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Q-2J02J000H.25M 516-090-501-522 1901985-1 CPS16-LA00A10-SNCSNCWF-RI0CWVAR-W1019-S SG-8018CE 103.759770M-TJHSA0

SI4172DY-T1-GE3

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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