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Part Number Overview
Manufacturer Part Number
NTHS2101PT1G
Description
MOSFET P-CH 8V 5.4A CHIPFET
Detailed Description
P-Channel 8 V 5.4A (Tj) 1.3W (Ta) Surface Mount ChipFET™
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
5.4A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
25mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 6.4 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
ChipFET™
Package / Case
8-SMD, Flat Lead
Base Product Number
NTHS21
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
NTHS2101PT1GOS-ND
NTHS2101PT1GOSCT
NTHS2101PT1GOSTR
=NTHS2101PT1GOSCT-ND
NTHS2101PT1GOS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTHS2101PT1G
Documents & Media
Datasheets
1(NTHS2101P)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 14/Apr/2010)
HTML Datasheet
1(NTHS2101P)
Quantity Price
-
Substitutes
-