Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Half Bridge)
FET Feature
Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Rds On (Max) @ Id, Vgs
9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
1.9V @ 250µA, 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.8nC @ 45V, 7.4nC @ 45V
Input Capacitance (Ciss) (Max) @ Vds
494pF @ 12.5V, 970pF @ 12.5V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-VSON (3.3x3.3)
Base Product Number
CSD86336Q3