Part Number Overview

Manufacturer Part Number
NTH4L080N120SC1
Description
SICFET N-CH 1200V 29A TO247-4
Detailed Description
N-Channel 1200 V 29A (Tc) 170W (Tc) Through Hole TO-247-4L
Manufacturer
onsemi
Standard LeadTime
9 Weeks
Edacad Model
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
1670 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Base Product Number
NTH4L080

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

488-NTH4L080N120SC1
2156-NTH4L080N120SC1

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTH4L080N120SC1

Documents & Media

Datasheets
1(NTH4L080N120SC1)
Environmental Information
()
PCN Design/Specification
1(Dimension/Color Change 24/Feb/2021)
PCN Packaging
1(Packing quantity increase 28/Dec/2020)
HTML Datasheet
1(NTH4L080N120SC1)

Quantity Price

Quantity: 1020
Unit Price: $6.5208
Packaging: Tube
MinMultiplier: 1
Quantity: 510
Unit Price: $7.24533
Packaging: Tube
MinMultiplier: 1
Quantity: 120
Unit Price: $8.21142
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $9.17733
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $11.5
Packaging: Tube
MinMultiplier: 1

Substitutes

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