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Part Number Overview
Manufacturer Part Number
PQMD12Z
Description
NOW NEXPERIA PQMD - SMALL SIGNAL
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz, 180MHz 350mW Surface Mount DFN1010B-6
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
7,612
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
47kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
230MHz, 180MHz
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
6-XFDFN Exposed Pad
Supplier Device Package
DFN1010B-6
Base Product Number
PQMD12
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
NEXNXPPQMD12Z
2156-PQMD12Z
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/NXP USA Inc. PQMD12Z
Documents & Media
Datasheets
1(PQMD12Z Datasheet)
Quantity Price
Quantity: 7612
Unit Price: $0.04
Packaging: Bulk
MinMultiplier: 7612
Packaging: Bulk
MinMultiplier: 7612
Substitutes
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