Part Number Overview

Manufacturer Part Number
PSMN4R3-80PS,127
Description
MOSFET N-CH 80V 120A TO220AB
Detailed Description
N-Channel 80 V 120A (Tc) 306W (Tc) Through Hole TO-220AB
Manufacturer
Nexperia USA Inc.
Standard LeadTime
15 Weeks
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Nexperia USA Inc.
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
111 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8161 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
306W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
PSMN4R3

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

568-6713-5
1727-5285
934065171127
568-6713-ND
2156-PSMN4R3-80PS,127-NEX
5202-PSMN4R3-80PS,127TR
568-6713-5-ND
NEXNXPPSMN4R3-80PS,127
PSMN4R380PS127
568-6713

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. PSMN4R3-80PS,127

Documents & Media

Datasheets
1(Datasheet)
PCN Design/Specification
1(Logo Marking Update 30/Nov/2016)
PCN Packaging
()
HTML Datasheet
1(PSMN4R3-80PS Datasheet)

Quantity Price

Quantity: 5000
Unit Price: $1.66488
Packaging: Tube
MinMultiplier: 5000

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