Part Number Overview

Manufacturer Part Number
NTMS4107NR2G
Description
MOSFET N-CH 30V 11A 8SOIC
Detailed Description
N-Channel 30 V 11A (Ta) 930mW (Ta) Surface Mount 8-SOIC
Manufacturer
onsemi
Standard LeadTime
Edacad Model
NTMS4107NR2G Models
Standard Package
2,500
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6000 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
930mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
NTMS41

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Other Names

ONSONSNTMS4107NR2G
2156-NTMS4107NR2G-ONTR
NTMS4107NR2G-ND
NTMS4107NR2GOSTR
NTMS4107NR2GOSCT
=NTMS4107NR2GOSCT-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTMS4107NR2G

Documents & Media

Datasheets
1(NTMS4107N)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Multiple Devices 21/Jan/2010)
PCN Design/Specification
1(Copper Wire 12/May/2009)
HTML Datasheet
1(NTMS4107N)
EDA Models
1(NTMS4107NR2G Models)

Quantity Price

-

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