Mfr
Renesas Electronics Corporation
Technology
MOSFET (Metal Oxide)
Configuration
2 N and 2 P-Channel (Full Bridge)
FET Feature
Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.5A
Rds On (Max) @ Id, Vgs
65mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs
5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
290pF @ 10V
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOP
Base Product Number
RJM0306