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Part Number Overview
Manufacturer Part Number
NTB6412ANT4G
Description
MOSFET N-CH 100V 58A D2PAK
Detailed Description
N-Channel 100 V 58A (Tc) 167W (Tc) Surface Mount D2PAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
800
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18.2mOhm @ 58A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
NTB64
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
NTB6412ANT4GOSCT
2156-NTB6412ANT4G-ONTR
ONSONSNTB6412ANT4G
NTB6412ANT4GOSTR
NTB6412ANT4GOSDKR
NTB6412ANT4G-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTB6412ANT4G
Documents & Media
Datasheets
1(NTB,NTP6412AN)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 20/Jan/2015)
PCN Design/Specification
1(Mult Dev Material Chg 2/Oct/2018)
HTML Datasheet
1(NTB,NTP6412AN)
Quantity Price
-
Substitutes
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