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Part Number Overview
Manufacturer Part Number
DMG4435SSS-13
Description
MOSFET P-CH 30V 7.3A 8SOP
Detailed Description
P-Channel 30 V 7.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
Manufacturer
Diodes Incorporated
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V, 20V
Rds On (Max) @ Id, Vgs
16mOhm @ 11A, 20V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35.4 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1614 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
DMG4435
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
DMG4435SSS-13DICT
DMG4435SSS-13DIDKR
DMG4435SSS13
DMG4435SSS-13DITR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMG4435SSS-13
Documents & Media
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Obsolescence/ EOL
1(Mult Dev EOL 2/Sep/2021)
PCN Design/Specification
1(Bond Wire 11/Nov/2011)
PCN Assembly/Origin
1(Mult Dev 06/Dec/2019)
PCN Other
1(Multiple Device Changes 29/Apr/2013)
HTML Datasheet
1(DMG4435SSS)
Quantity Price
-
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