Part Number Overview

Manufacturer Part Number
FQPF19N20CYDTU
Description
MOSFET N-CH 200V 19A TO220F-3
Detailed Description
N-Channel 200 V 19A (Tc) 43W (Tc) Through Hole TO-220F-3 (Y-Forming)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQPF19N20CYDTU Models
Standard Package
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
43W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3 (Y-Forming)
Package / Case
TO-220-3 Full Pack, Formed Leads
Base Product Number
FQPF1

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQPF19N20CYDTU

Documents & Media

Environmental Information
1(onsemi RoHS)
EDA Models
1(FQPF19N20CYDTU Models)

Quantity Price

-

Substitutes

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