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Part Number Overview
Manufacturer Part Number
UPA2003C-A
Description
NPN SILICON EPITAXIAL DARLINGTON
Detailed Description
Bipolar (BJT) Transistor Array 7 NPN Darlington 60V 500mA 900mW Through Hole 16-DIP
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
299
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
7 NPN Darlington
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 350mA, 2V
Power - Max
900mW
Frequency - Transition
-
Operating Temperature
-30°C ~ 75°C
Mounting Type
Through Hole
Package / Case
16-DIP (0.300", 7.62mm)
Supplier Device Package
16-DIP
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
RENRNSUPA2003C-A
2156-UPA2003C-A
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Renesas Electronics Corporation UPA2003C-A
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 299
Unit Price: $1.01
Packaging: Bulk
MinMultiplier: 299
Packaging: Bulk
MinMultiplier: 299
Substitutes
-