Part Number Overview

Manufacturer Part Number
PHB193NQ06T,118
Description
MOSFET N-CH 55V 75A D2PAK
Detailed Description
N-Channel 55 V 75A (Tc) 300W (Tc) Surface Mount D2PAK
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
800
Supplier Stocks

Technical specifications

Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
85.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5082 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
PHB19

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

PHB193NQ06T /T3-ND
934058545118
PHB193NQ06T /T3

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PHB193NQ06T,118

Documents & Media

Datasheets
1(PHB,PHP193NQ06T)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PHB,PHP193NQ06T)

Quantity Price

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