Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
94A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 47A, 10V
Vgs(th) (Max) @ Id
2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4420 pF @ 30 V
Power Dissipation (Max)
830mW (Ta), 116W (Tc)
Operating Temperature
175°C
Mounting Type
Surface Mount
Supplier Device Package
8-SOP Advance (5x5)
Package / Case
8-PowerVDFN
Base Product Number
TPH3R506