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Part Number Overview
Manufacturer Part Number
SI2319DDS-T1-GE3
Description
MOSFET P-CH 40V 2.7A/3.6A SOT23
Detailed Description
P-Channel 40 V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Manufacturer
Vishay Siliconix
Standard LeadTime
14 Weeks
Edacad Model
SI2319DDS-T1-GE3 Models
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET® Gen III
Package
Tape & Reel (TR)
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
2.7A (Ta), 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
75mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
1W (Ta), 1.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
SI2319
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SI2319DDS-T1-GE3TR
SI2319DDS-T1-GE3CT
SI2319DDS-T1-GE3DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI2319DDS-T1-GE3
Documents & Media
Datasheets
1(SI2319DDS)
Environmental Information
()
PCN Assembly/Origin
1(New Solder Plating Site 18/Apr/2023)
HTML Datasheet
1(SI2319DDS)
EDA Models
1(SI2319DDS-T1-GE3 Models)
Quantity Price
Quantity: 30000
Unit Price: $0.13853
Packaging: Tape & Reel (TR)
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MinMultiplier: 1
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