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Part Number Overview
Manufacturer Part Number
FDD6612A
Description
POWER FIELD-EFFECT TRANSISTOR, 9
Detailed Description
N-Channel 30 V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount TO-252 (DPAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
598
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9.5A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.4 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 36W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FDD6612A
FAIFSCFDD6612A
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDD6612A
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 598
Unit Price: $0.5
Packaging: Bulk
MinMultiplier: 598
Packaging: Bulk
MinMultiplier: 598
Substitutes
-