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Part Number Overview
Manufacturer Part Number
FDP027N08B-F102
Description
MOSFET N-CH 80V 120A TO220-3
Detailed Description
N-Channel 80 V 120A (Tc) 246W (Tc) Through Hole TO-220-3
Manufacturer
onsemi
Standard LeadTime
6 Weeks
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
PowerTrench®
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
178 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13530 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
246W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FDP027
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FDP027N08B_F102
FDP027N08B_F102-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDP027N08B-F102
Documents & Media
Datasheets
1(FDP027N08B_F102)
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
()
Featured Product
1(ON Semiconductor - 30 V to 60 V Trench6 N-Channel MOSFET)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Wafer Fab Capacity Expansion 29/Oct/2021)
PCN Packaging
1(Mult Devices 24/Oct/2017)
PCN Part Number
1(Mult Device Part Number Chg 30/May/2017)
HTML Datasheet
1(FDP027N08B_F102)
Quantity Price
Quantity: 5000
Unit Price: $1.46362
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MinMultiplier: 1
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Unit Price: $3.13
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