Part Number Overview

Manufacturer Part Number
AUIRF1018E
Description
MOSFET N-CH 60V 79A TO220AB
Detailed Description
N-Channel 60 V 79A (Tc) 110W (Tc) Through Hole TO-220AB
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
AUIRF1018E Models
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
79A (Tc)
Rds On (Max) @ Id, Vgs
8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
AUIRF1018

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AUIRF1018E

Documents & Media

Datasheets
1(AUIRF1018E Overview)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(AUIRF1018E Overview)
EDA Models
1(AUIRF1018E Models)

Quantity Price

Quantity: 1000
Unit Price: $1.12512
Packaging: Tube
MinMultiplier: 1000

Substitutes

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