China
Spain
Rusia
Italy
Germany2SD2164-AZ
Part Number Overview
Manufacturer Part Number
2SD2164-AZ
Description
POWER BIPOLAR TRANSISTOR NPN
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 3 A 110MHz 2 W Through Hole MP-45F
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
313
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 20mA, 2A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
800 @ 500mA, 5V
Power - Max
2 W
Frequency - Transition
110MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Supplier Device Package
MP-45F
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-2SD2164-AZ
RENRNS2SD2164-AZ
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SD2164-AZ
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 313
Unit Price: $0.96
Packaging: Bulk
MinMultiplier: 313
Packaging: Bulk
MinMultiplier: 313
Substitutes
-