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Part Number Overview
Manufacturer Part Number
DMJ65H650SCTI
Description
MOSFET N-CH 650V 10A ITO220AB
Detailed Description
N-Channel 650 V 10A (Tc) 31W (Tc) Through Hole ITO-220AB (Type TH)
Manufacturer
Diodes Incorporated
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Diodes Incorporated
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.9 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
639 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
31W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220AB (Type TH)
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
DMJ65
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMJ65H650SCTI
Documents & Media
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Obsolescence/ EOL
1(Obsolete Notice 02/Nov/2022)
Quantity Price
-
Substitutes
-