China
Spain
Rusia
Italy
GermanyFDD10N20LZTM
Part Number Overview
Manufacturer Part Number
FDD10N20LZTM
Description
MOSFET N-CH 200V 7.6A DPAK
Detailed Description
N-Channel 200 V 7.6A (Tc) 83W (Tc) Surface Mount TO-252AA
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FDD10N20LZTM Models
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
UniFET™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
360mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
585 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
FDD10N20
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCFDD10N20LZTM
2156-FDD10N20LZTM-OS
FDD10N20LZTM-ND
FDD10N20LZTMTR
FDD10N20LZTMCT
FDD10N20LZTMDKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDD10N20LZTM
Documents & Media
Datasheets
1(FDD10N20LZTM Datasheet)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 23/Dec/2021)
PCN Design/Specification
()
PCN Assembly/Origin
1(Mult Dev 13/Aug/2020)
PCN Packaging
()
EDA Models
1(FDD10N20LZTM Models)
Quantity Price
-
Substitutes
-