Part Number Overview

Manufacturer Part Number
HUF75617D3
Description
MOSFET N-CH 100V 16A IPAK
Detailed Description
N-Channel 100 V 16A (Tc) 64W (Tc) Through Hole I-PAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
90mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
64W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
HUF75

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi HUF75617D3

Documents & Media

Datasheets
1(HUF75617D3/D3S)
Environmental Information
()
HTML Datasheet
1(HUF75617D3/D3S)

Quantity Price

-

Substitutes

Part No. : IRFU3910PBF
Manufacturer. : Infineon Technologies
Quantity Available. : 5,019
Unit Price. : $1.03000
Substitute Type. : Similar