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Part Number Overview
Manufacturer Part Number
IRFD9120
Description
MOSFET P-CH 100V 1A 4DIP
Detailed Description
P-Channel 100 V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
325
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
390 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
HARHARIRFD9120
2156-IRFD9120-HC
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRFD9120
Documents & Media
Datasheets
1(IRFD9123)
Quantity Price
Quantity: 325
Unit Price: $0.92
Packaging: Bulk
MinMultiplier: 325
Packaging: Bulk
MinMultiplier: 325
Substitutes
-