China
Spain
Rusia
Italy
GermanyG2R1000MT33J
Part Number Overview
Manufacturer Part Number
G2R1000MT33J
Description
SIC MOSFET N-CH 4A TO263-7
Detailed Description
N-Channel 3300 V 4A (Tc) 74W (Tc) Surface Mount TO-263-7
Manufacturer
GeneSiC Semiconductor
Standard LeadTime
26 Weeks
Edacad Model
G2R1000MT33J Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
GeneSiC Semiconductor
Series
G2R™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
3300 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
238 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
G2R1000
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/GeneSiC Semiconductor G2R1000MT33J
Documents & Media
Datasheets
1(G2R1000MT33J)
EDA Models
1(G2R1000MT33J Models)
Quantity Price
Quantity: 1
Unit Price: $18.69
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Substitutes
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