Part Number Overview

Manufacturer Part Number
IXTN120P20T
Description
MOSFET P-CH 200V 106A SOT227B
Detailed Description
P-Channel 200 V 106A (Tc) 830W (Tc) Chassis Mount SOT-227B
Manufacturer
IXYS
Standard LeadTime
57 Weeks
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
IXYS
Series
TrenchP™
Package
Tube
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
106A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
740 nC @ 10 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
73000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
830W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXTN120

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTN120P20T

Documents & Media

Datasheets
1(IXTN120P20T)
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(IXTN120P20T)

Quantity Price

Quantity: 100
Unit Price: $42.7748
Packaging: Tube
MinMultiplier: 1
Quantity: 10
Unit Price: $47.528
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $52.28
Packaging: Tube
MinMultiplier: 1

Substitutes

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