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Part Number Overview
Manufacturer Part Number
IPB180N03S4LH0ATMA1
Description
MOSFET N-CH 30V 180A TO263-7
Detailed Description
N-Channel 30 V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
23000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-3
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number
IPB180
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IPB180N03S4LH0ATMA1
IFEINFIPB180N03S4LH0ATMA1
IPB180N03S4L-H0-ND
IPB180N03S4LH0ATMA1TR
IPB180N03S4L-H0
SP000555050
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB180N03S4LH0ATMA1
Documents & Media
Datasheets
1(IPB180N03S4L-H0)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPB180N03S4L-H0)
Quantity Price
-
Substitutes
Part No. : IPB180N04S4LH0ATMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 0
Unit Price. : $2.16604
Substitute Type. : MFR Recommended
Quantity Available. : 0
Unit Price. : $2.16604
Substitute Type. : MFR Recommended