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Part Number Overview
Manufacturer Part Number
IRF8302MTR1PBF
Description
MOSFET N CH 30V 31A MX
Detailed Description
N-Channel 30 V 31A (Ta), 190A (Tc) 2.8W (Ta), 104W (Tc) Surface Mount DIRECTFET™ MX
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
31A (Ta), 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6030 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 104W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MX
Package / Case
DirectFET™ Isometric MX
Base Product Number
IRF8302
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF8302MTR1PBFCT
IRF8302MTR1PBFDKR
IRF8302MTR1PBFTR
SP001566576
IRF8302MTR1PBF-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF8302MTR1PBF
Documents & Media
Datasheets
1(IRF8302M (TR) PBF)
Other Related Documents
1(IR Part Numbering System)
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Multiple Devices 20/Dec/2013)
HTML Datasheet
1(IRF8302M (TR) PBF)
Quantity Price
-
Substitutes
-