Part Number Overview

Manufacturer Part Number
IPP80CN10NGHKSA1
Description
MOSFET N-CH 100V 13A TO220-3
Detailed Description
N-Channel 100 V 13A (Tc) 31W (Tc) Through Hole PG-TO220-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
716 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
31W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP80C

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IPP80CN10N G
IPP80CN10N G-ND
IPP80CN10NGX
SP000680966
IPP80CN10NGXK
SP000096475

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP80CN10NGHKSA1

Documents & Media

Datasheets
1(IPx(78,80)CN10N G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx(78,80)CN10N G)

Quantity Price

-

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