Part Number Overview

Manufacturer Part Number
G3R350MT12D
Description
SIC MOSFET N-CH 11A TO247-3
Detailed Description
N-Channel 1200 V 11A (Tc) 74W (Tc) Through Hole TO-247-3
Manufacturer
GeneSiC Semiconductor
Standard LeadTime
26 Weeks
Edacad Model
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
GeneSiC Semiconductor
Series
G3R™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id
2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 15 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
334 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
G3R350

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/GeneSiC Semiconductor G3R350MT12D

Documents & Media

Datasheets
1(G3R350MT12D)

Quantity Price

Quantity: 2500
Unit Price: $3.16002
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MinMultiplier: 1
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Unit Price: $3.314
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Unit Price: $3.561
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Unit Price: $3.734
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Quantity: 25
Unit Price: $4.0132
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Unit Price: $4.208
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Quantity: 1
Unit Price: $4.74
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MinMultiplier: 1

Substitutes

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